, o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. ls310-ls313 monolithic dual npn transistors telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 features very high gain tight vbe matching high ft hfea200@10ua-1ma |vbei-vbei| = 0.2mvtyp. 250mhz typ.@ 1ma absolute maximum ratings note 1- @ 25c (unless otherwise noted) ic collector current 10ma maximum temperatures storage temperature operating junction temperature maximum power dissipation device dissipation ( g free air linear derating factor -55to+150c -55to+150c one side 250mw 2.3mw/'c both sides 500mw 4.3mw/c to71 & to78 e2/(d ?\e1 b2 c2\(z b1 d/c1 top view electrical characteristics @ 25c (unless otherwise noted) symbol bvceo bvceo bvebo bvcco hfe hfe hfe vce(sat) i ceo iebo cobo ccic2 ldc2 fr nf characteristics col lector to base voltage collector to emitter voltage emitter-base breakdown voltage collector to collector voltage dc current gain dc current gain dc current gain collector saturation voltage collector cutoff current emitter cutoff current out put capacitance collector to collector capacitance collector to collector leakage current current gain bandwidth product narrow band noise figure ls310 25 25 6.0 45 150 150 150 0.25 0.2 0.2 2 2 1.0 200 3 LS311 45 45 6.0 45 150 150 150 0.25 0.2 0.2 2 2 1.0 200 3 ls312 60 60 6.0 60 200 200 200 0.25 0.2 0.2 2 2 1.0 200 3 ls313 45 45 6.0 45 400 1000 400 400 0.25 0.2 0.2 2 2 1.0 200 3 min. win. min. min. min. max. min. min, max. max. max. max. max. max min. max. units v v v v v na na pf pf ua mhz db conditions lc = 10ua, ie = 0 ic = 1ma, ib = 0 le = 10ua, lc = 0 note 2 lc = 10ua, ie= ib = oa lc = 10ua, vce- 5v lc = 100ua, vce = 5v ic = 1 ma, vce = 5v ic = 1ma, ib = 0.1ma ie = 0, vcb = note 3 ic = 0, vcb = 3v ie = 0, vcb = 5v vcc = 0v vcc= note 4 lc = 1ma, vce = 5v lc = 100ua, vce = 5v bw = 200hz, rg = 10kn f=1khz nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics @ 25c symbol |vee1-vbe2| a|(vbe1-vbe2)|/c [ib1-ib2| |a(!b1-lb2)|/c hfe1/hfe2 characteristics base emitter voltage differential base emitter voltage differential change with temperature base current differential base current differential change with temperature current gain differential ls310 1 3 2 15 10 LS311 0.4 1 1 5 10 0.5 5 ls312 0.2 0.5 0.5 2 5 0.3 5 ls313 0.4 1 1 5 1.25 5 0.5 5 mini. typ. max. typ. max. typ. max. max. typ. units rnv mv uv/c na na natc % conditions lc= lopa, vce = 5v lc= 10ua, vce = 5v ta = -55cto+125c lc= 10|ja, vce = 5v lc= 10na, vce = 5v ta = -55cto+125c lc = 10^a, vce = 5v to-71 six lead 0.030 max 0209 t 0210 0170 6 leads m ? -j o.soo win 0019 oia n nn 0 016 u u u . . t 0.100 4 > ^t? 0.050 ?15: 0046 ' 0.036 to-78 0048 0028
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